窒化物半導体国際ワークショップ(The International Workshop on Nitride Semiconductors 2018 (IWN 2018))）発表内容

今井尚弘
[MoP-GR-7] Two-step growth of InN using a high temperature InN buffer layer

Takahiro Imai, Hiroki Yamaki, Masahiro Hemmi, Masahiro Yoshikawa, Daiki Toyama, and Toshiki Makimoto